Title:
DRIVING CIRCUIT FOR SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2007/116900
Kind Code:
A1
Abstract:
A driving circuit for a semiconductor element eliminates false detection of
an abnormality of a semiconductor element (1) when a gate-on command is inputted
in a status where the gate voltage of the semiconductor element (1) is not sufficiently
lowered. A control quantity (gate voltage) of the semiconductor element (1)
is permitted to be detected only during a period which corresponds to a control
quantity (Qon) of the semiconductor element (1) when an on-signal is inputted
to a control circuit (2), a detected control quantity (Qt) detected during the
period is compared with a control comparison quantity (Qs) set by corresponding
to the control quantity (Qon) to output an abnormal signal, and the semiconductor
element (1) is shut off at a speed lower than a normal shutoff speed.
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Inventors:
NAKATAKE HIROSHI (JP)
ISHIBASHI SATOSHI (JP)
IDENOUE SHINSUKE (JP)
OI TAKESHI (JP)
KINOUCHI SHINICHI (JP)
HORIGUCHI TAKESHI (JP)
ISHIBASHI SATOSHI (JP)
IDENOUE SHINSUKE (JP)
OI TAKESHI (JP)
KINOUCHI SHINICHI (JP)
HORIGUCHI TAKESHI (JP)
Application Number:
PCT/JP2007/057536
Publication Date:
October 18, 2007
Filing Date:
April 04, 2007
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
NAKATAKE HIROSHI (JP)
ISHIBASHI SATOSHI (JP)
IDENOUE SHINSUKE (JP)
OI TAKESHI (JP)
KINOUCHI SHINICHI (JP)
HORIGUCHI TAKESHI (JP)
NAKATAKE HIROSHI (JP)
ISHIBASHI SATOSHI (JP)
IDENOUE SHINSUKE (JP)
OI TAKESHI (JP)
KINOUCHI SHINICHI (JP)
HORIGUCHI TAKESHI (JP)
International Classes:
H02M1/08; H02M1/00; H03K17/08
Foreign References:
| JP2004064930A | 2004-02-26 | |||
| JP2003284318A | 2003-10-03 |
Attorney, Agent or Firm:
MURAKAMI, Keigo et al. (SUN-BURST Building1-18, Minamitsukaguchi-Cho 1-chom, Amagasaki-Shi Hyogo 12, JP)
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