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Patent Searching and Data


Title:
DRY ETCHING AGENT AND DRY ETCHING METHOD
Document Type and Number:
WIPO Patent Application WO/2012/008282
Kind Code:
A1
Abstract:
A dry etching agent which comprises (A) 1,3,3,3- tetrafluoropropene, (B) at least one additive gas selected from the group consisting of H2, O2, CO, O3, CO2, COCl2, CF3OF, COF2, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HI, HBr, HCl, NO, NH3, and YFn [wherein Y is Cl, Br or I; n is an integer satisfying the relationship: 1≤n≤7], and (C) an inert gas. The dry etching agent has little influence on the global environment, can dramatically widen the process window, and can accommodate, without a special substrate-exciting operation or the like, fabrication which necessitates a small side etch ratio and a high aspect ratio.

Inventors:
UMEZAKI TOMONORI
HIBINO YASUO
MORI ISAMU
OKAMOTO SATORU
KIKUCHI AKIOU
Application Number:
PCT/JP2011/064524
Publication Date:
January 19, 2012
Filing Date:
June 24, 2011
Export Citation:
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Assignee:
CENTRAL GLASS CO LTD (JP)
UMEZAKI TOMONORI
HIBINO YASUO
MORI ISAMU
OKAMOTO SATORU
KIKUCHI AKIOU
International Classes:
H01L21/3065; C07C21/18; C09K13/08
Foreign References:
JP2007537602A2007-12-20
JP2005530345A2005-10-06
JP2007535611A2007-12-06
Other References:
See also references of EP 2595179A4
None
Attorney, Agent or Firm:
KOBAYASHI, Hiromichi et al. (JP)
Hiromichi Kobayashi (JP)
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Claims: