Title:
ENHANCED n TYPE SILICON MATERIAL FOR EPITAXIAL WAFER SUBSTRATE AND METHOD OF MAKING SAME
Document Type and Number:
WIPO Patent Application WO2001006545
Kind Code:
B1
Abstract:
An enhanced n<+> silicon material for epitaxial substrates and a method for producing it are described. The enhanced material leads to improved gettering characteristics of n/n<+> epitaxial wafers based on these substrates. The method for preparing such n<+> silicon material includes applying a co-doping of carbon to the usual n dopant in the silicon melt, before growing respective CZ crystals. This improves yield of enhanced n<+> silicon material in crystal growing and ultimately leads to device yield stabilization of improvement when such n/n<+> epitaxial wafers are applied in device manufacturing.
Inventors:
KIRSCHT FRITZ G
WILDES PETER D
TODT VOLKER R
FUKUTO NOBUO
SNEGIREV BORIS A
KIM SEUNG-BAE
WILDES PETER D
TODT VOLKER R
FUKUTO NOBUO
SNEGIREV BORIS A
KIM SEUNG-BAE
Application Number:
PCT/US2000/040360
Publication Date:
July 05, 2001
Filing Date:
July 12, 2000
Export Citation:
Assignee:
MITSUBISHI SILICON AMERICA (US)
International Classes:
C30B15/00; C30B15/04; C30B29/06; H01L21/205; H01L21/322; (IPC1-7): C30B15/00; C30B29/06
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