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Title:
ELECTROCHEMICALLY FABRICATED HERMETICALLY SEALED MICROSTRUCTURES
Document Type and Number:
WIPO Patent Application WO2003095706
Kind Code:
A3
Abstract:
In some embodiments, multilayer structures are electrochemically fabricated from at least one structural material (e.g. nickel), at least one sacrificial material (e.g. copper), and at least one sealing material (e.g. solder). In some embodiments, the layered structure is made to have a desired configuration which is at least partially and immediately surrounded by sacrificial material which is in turn surrounded almost entirely by structural material. The surrounding structural material includes openings in the surface through which etchant can attack and remove trapped sacrificial material found within. Sealing material is located near the openings. After removal of the sacrificial material, the box is evacuated or filled with a desired gas or liquid. Thereafter, the sealing material is made to flow, seal the openings, and resolidify. In other embodiments, a post-layer formation lid or other enclosure completing structure is added.

Inventors:
COHEN ADAM L
LOCKARD MICHAEL S
SMALLEY DENNIS R
ARAT VACIT
LEE CHRISTOPHER J
Application Number:
PCT/US2003/014659
Publication Date:
August 18, 2005
Filing Date:
May 07, 2003
Export Citation:
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Assignee:
MEMGEN CORP (US)
International Classes:
B81B3/00; G01P15/08; G01P15/125; H01P1/202; H01P3/06; H01P5/18; H01P11/00; H05K3/46; (IPC1-7): C25D1/00; C25D1/02
Foreign References:
US20010014409A12001-08-16
EP0567332A21993-10-27
Other References:
COHEN A ET AL: "EFAB: rapid, low-cost desktop micromachining of high aspect ratio true 3-D MEMS", MICRO ELECTRO MECHANICAL SYSTEMS, 1999. MEMS '99. TWELFTH IEEE INTERNATIONAL CONFERENCE ON ORLANDO, FL, USA 17-21 JAN. 1999, PISCATAWAY, NJ, USA,IEEE, US, 17 January 1999 (1999-01-17), pages 244 - 251, XP010321754, ISBN: 0-7803-5194-0
HILL S: "AN E-FAB WAY FOR MAKING THE MICRO WORLD", MATERIALS WORLD, THE INSTITUTE OF MATERIALS, LONDON, GB, vol. 7, no. 9, 1999, pages 538 - 540, XP008045910, ISSN: 0967-8638
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