Title:
METHOD FOR CURING LOW DIELECTRIC CONSTANT FILM BY ELECTRON BEAM
Document Type and Number:
WIPO Patent Application WO2003095702
Kind Code:
A3
Abstract:
A method for depositing a low dielectric constant film on a substrate. The method includes depositing a low dielectric constant film comprising silicon, carbon, oxygen and hydrogen in a chemical vapor deposition chamber. The method further includes exposing the low dielectric constant film to an electron beam at conditions sufficient to increase the hardness of the low dielectric constant film.
Inventors:
MOGHADAM FARHAD D
ZHAO JUN
WEIDMAN TIMOTHY
ROBERTS RICK J
XIA LI-QUN
DEMOS ALEXANDROS T
ZHU WEN H
HUANG TZU-FANG
LI LIHUA
YIEH ELLIE Y
ZHENG YI
NEMANI SRINIVAS D
HOLLAR ERIC
YIM KANG SUB
NGUYEN SON VAN
D CRUZ LESTER A
KIM TROY
SUGIARTO DIAN
LEE PETER WAI-MAN
M SAAD HICHEM
TAM MELISSA M
ZHAO JUN
WEIDMAN TIMOTHY
ROBERTS RICK J
XIA LI-QUN
DEMOS ALEXANDROS T
ZHU WEN H
HUANG TZU-FANG
LI LIHUA
YIEH ELLIE Y
ZHENG YI
NEMANI SRINIVAS D
HOLLAR ERIC
YIM KANG SUB
NGUYEN SON VAN
D CRUZ LESTER A
KIM TROY
SUGIARTO DIAN
LEE PETER WAI-MAN
M SAAD HICHEM
TAM MELISSA M
Application Number:
PCT/US2003/014272
Publication Date:
April 15, 2004
Filing Date:
May 08, 2003
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
International Classes:
C23C16/40; C23C16/42; C23C16/56; H01L21/312; H01L21/316; H01L21/768; H01L23/522; B05D3/06; B05D7/24; H01L21/3105; (IPC1-7): C23C16/30; C23C16/56; H01L21/3105
Domestic Patent References:
| WO2001029052A1 | 2001-04-26 | |||
| WO2001061737A1 | 2001-08-23 | |||
| WO1997000535A1 | 1997-01-03 |
Foreign References:
| US6271146B1 | 2001-08-07 | |||
| EP1354980A1 | 2003-10-22 |
Other References:
See also references of EP 1504138A2
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