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Title:
ELECTROLESS PLATING METHOD
Document Type and Number:
WIPO Patent Application WO/2008/056537
Kind Code:
A1
Abstract:
This invention provides an electroless plating method comprising electrolessly plating the surface of a metal base sample (22) using a supercritical fluid or a subcritical fluid in such a state that a metal powder is dispersed in an electroless plating liquid (19). According to this method, a homogeneous and thick plating layer is formed in a short time by taking advantage of an induction eutectoid phenomenon. In the electroless plating method, the metal powder may have an average particle diameter of not less than 1 nm and not more than 100 μm, and the electroless plating method may also be applied to a damascene process or a dual damascene process which is a method for forming a fine metal wiring within a semiconductor element. The above constitution can provide an electroless plating method which can realize the formation of an even film by electroless plating in a short time using a subcritical fluid or a supercritical fluid by taking advantage of an induction eutectoid phenomenon.

Inventors:
MIYATA SEIZO (JP)
SHIMIZU TETSUYA (JP)
TAJIMA HISAYOSHI (JP)
SONE MASATO (JP)
Application Number:
PCT/JP2007/070692
Publication Date:
May 15, 2008
Filing Date:
October 24, 2007
Export Citation:
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Assignee:
SES CO LTD (JP)
MYATA SEIZO (JP)
SHIMIZU TETSUYA (JP)
TAJIMA HISAYOSHI (JP)
SONE MASATO (JP)
International Classes:
H01L21/288; C23C18/31
Foreign References:
JPH10245683A1998-09-14
JPH0868885A1996-03-12
JP2003321798A2003-11-14
JPH08158097A1996-06-18
JP2003096596A2003-04-03
JP2005259959A2005-09-22
JPH10245683A1998-09-14
JP2006037188A2006-02-09
Attorney, Agent or Firm:
WIN TECH PATENT OFFICE (Uchikanda-Shibuya Bldg. 16-11, Uchikanda 2-chome, Chiyoda-k, Tokyo 47, JP)
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