Title:
ELECTROSTATIC PROTECTION DEVICE FOR SEMICONDUCTOR
Document Type and Number:
WIPO Patent Application WO/2022/027952
Kind Code:
A1
Abstract:
The present invention relates to an electrostatic protection device for a semiconductor, comprising: a substrate, a first conductivity type of deep well region being formed in the substrate; a first diode, the first diode having an anode connected to a first voltage and a cathode connected to an input/output end; and a second diode, the second diode having an anode connected to the input/output end and a cathode connected to a second voltage. Both the first and second diodes are located in the first conductivity type of deep well region.
Inventors:
XU QI'AN (CN)
Application Number:
PCT/CN2021/076271
Publication Date:
February 10, 2022
Filing Date:
February 09, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/02; H01L23/60
Foreign References:
| CN108269800A | 2018-07-10 | |||
| CN104078460A | 2014-10-01 | |||
| US7279726B2 | 2007-10-09 |
Other References:
See also references of EP 4195269A4
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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