Title:
EPITAXIAL SILICON WAFER, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/044562
Kind Code:
A1
Abstract:
A method for producing an epitaxial silicon wafer 100 according to the present invention is characterized by comprising: a step wherein a surface 10A of a silicon wafer 10 is irradiated with a beam of cluster ions 12 including ions of SiHx (wherein x represents one or more integers selected from among integers from 1 to 3) and ions of C2Hy (wherein y represents one or more integers selected from among integers from 2 to 5) so as to form a modification layer 14, in which constituent elements of the cluster ion beam are solid-solved, in the surface layer part of the silicon wafer; and a step wherein a silicon epitaxial layer 16 is formed on the modification layer 14 of the silicon wafer. This method for producing an epitaxial silicon wafer 100 is also characterized in that the dose of the SiHx ions is set to 1.5 × 1014 ions/cm2 or more.
Inventors:
HIROSE RYO (JP)
KADONO TAKESHI (JP)
KADONO TAKESHI (JP)
Application Number:
PCT/JP2021/025864
Publication Date:
March 03, 2022
Filing Date:
July 08, 2021
Export Citation:
Assignee:
SUMCO CORP (JP)
International Classes:
H01L21/20; H01L21/265; H01L21/322
Domestic Patent References:
| WO2012157162A1 | 2012-11-22 | |||
| WO2015104965A1 | 2015-07-16 |
Foreign References:
| JP2010283022A | 2010-12-16 | |||
| JP2017112339A | 2017-06-22 | |||
| JP2009540536A | 2009-11-19 |
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
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