Title:
EPITAXIAL STRUCTURE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/046241
Kind Code:
A1
Abstract:
The present application provides an epitaxial structure and a preparation method therefor. The preparation method for an epitaxial structure comprises: forming a buffer layer, a mask layer, and an epitaxial layer located in first through holes and second through holes and located on the side of the mask layer facing away from a substrate. When the epitaxial layer is located in the second through holes, the growth direction of the epitaxial layer is perpendicular to the arrangement direction of the substrate and the buffer layer, i.e., lateral epitaxy. When the epitaxial layer is located in the first through holes, the growth direction of the epitaxial layer is parallel to the arrangement direction of the substrate and the buffer layer, i.e., longitudinal epitaxy. When the epitaxial layer is located on the side of the mask layer facing away from the substrate, the epitaxial layer simultaneously grows in two directions parallel and perpendicular to the arrangement direction of the substrate and the buffer layer. According to the present application, the mask layer having the first through holes is provided, the second through holes communicated with the first through holes are formed in the buffer layer, and the epitaxial layer is subjected to lateral/longitudinal/lateral epitaxial growth, so that the crystal defect density of the epitaxial layer is reduced, and the crystal quality of the epitaxial layer is improved.
Inventors:
XING KUN (CN)
YANG BO (CN)
XIE GUANGXIA (CN)
YANG BO (CN)
XIE GUANGXIA (CN)
Application Number:
PCT/CN2023/115109
Publication Date:
March 07, 2024
Filing Date:
August 26, 2023
Export Citation:
Assignee:
ZHUHAI PICNOVA SEMICONDUCTOR TECH CO LTD (CN)
International Classes:
H01L21/02
Domestic Patent References:
| WO2021226839A1 | 2021-11-18 |
Foreign References:
| CN115376889A | 2022-11-22 | |||
| CN102427100A | 2012-04-25 | |||
| CN107710382A | 2018-02-16 | |||
| CN106960781A | 2017-07-18 |
Attorney, Agent or Firm:
SCIHEAD IP LAW FIRM (CN)
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