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Title:
EPITAXIAL STRUCTURE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/046240
Kind Code:
A1
Abstract:
An epitaxial structure and a preparation method therefor. The preparation method for the epitaxial structure comprises: providing a substrate (11); forming a buffer layer (12) located on one side of the substrate (11); and forming an epitaxial layer (13) located on the side of the buffer layer (12) facing away from the substrate (11), wherein at least one of a magnesium source and an antimony source is added in the process of forming the buffer layer (12) and/or the epitaxial layer (13).

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Inventors:
XING KUN (CN)
YANG BO (CN)
HU JUNWEI (CN)
XIA ZHIHU (CN)
Application Number:
PCT/CN2023/115107
Publication Date:
March 07, 2024
Filing Date:
August 26, 2023
Export Citation:
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Assignee:
ZHUHAI PICNOVA SEMICONDUCTOR TECH CO LTD (CN)
International Classes:
H01L21/02
Foreign References:
CN115662876A2023-01-31
CN106653970A2017-05-10
CN1678771A2005-10-05
CN114784089A2022-07-22
Attorney, Agent or Firm:
SCIHEAD IP LAW FIRM (CN)
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