Title:
EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE, PREPARATION METHOD FOR EPITAXIAL STRUCTURE, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/109866
Kind Code:
A1
Abstract:
Disclosed in the present invention are an epitaxial structure of a semiconductor device, a preparation method for an epitaxial structure, and a semiconductor device. The epitaxial structure comprises a substrate and an epitaxial layer, which is located on one side of the substrate, wherein the surface roughness of the side of the substrate that is close to the epitaxial layer is Ra, and 0 < Ra ≤ 5 nm. According to the epitaxial structure of a semiconductor device, the preparation method for an epitaxial structure, and the semiconductor device provided in the present invention, by setting the surface roughness Ra of an epitaxial growth side of a substrate to satisfy 0 < Ra ≤ 5 nm, direct epitaxial growth of a high-quality epitaxial layer on the substrate is realized, such that there is no need to provide a relatively thick buffer layer, and the thermal resistance is thus reduced, thereby improving the working performance of the semiconductor device.
Inventors:
ZHANG HUI (CN)
ZHOU WENLONG (CN)
TAN KEWEI (CN)
DU XIAOQING (CN)
KONG SUSU (CN)
ZHOU WENLONG (CN)
TAN KEWEI (CN)
DU XIAOQING (CN)
KONG SUSU (CN)
Application Number:
PCT/CN2022/139012
Publication Date:
June 22, 2023
Filing Date:
December 14, 2022
Export Citation:
Assignee:
DYNAX SEMICONDUCTOR INC (CN)
International Classes:
H01L29/778; H01L21/20
Foreign References:
| JP2011066333A | 2011-03-31 | |||
| US20100163931A1 | 2010-07-01 | |||
| JP2002255694A | 2002-09-11 | |||
| US20180204928A1 | 2018-07-19 | |||
| CN111384150A | 2020-07-07 |
Attorney, Agent or Firm:
ZHONGZI LAW OFFICE (CN)
Download PDF: