Title:
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2011/016304
Kind Code:
A1
Abstract:
Disclosed is a nitride epitaxial substrate using single-crystal silicon as a base substrate and having excellent quality and characteristics. Specifically disclosed is an epitaxial substrate configured by forming a group-III nitride layer group on a (111) single-crystal silicon substrate such that the (0001) crystal plane is approximately parallel to the substrate surface, the epitaxial substrate being provided with a first group-III nitride layer produced from AlN and formed on the base substrate, a second group-III nitride layer produced from InxxAlyyGazzN (xx+yy+zz=1, 0≤xx≤1, 0
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Inventors:
SUMIYA SHIGEAKI (JP)
MIYOSHI MAKOTO (JP)
SUGIYAMA TOMOHIKO (JP)
ICHIMURA MIKIYA (JP)
KURAOKA YOSHITAKA (JP)
TANAKA MITSUHIRO (JP)
MIYOSHI MAKOTO (JP)
SUGIYAMA TOMOHIKO (JP)
ICHIMURA MIKIYA (JP)
KURAOKA YOSHITAKA (JP)
TANAKA MITSUHIRO (JP)
Application Number:
PCT/JP2010/061148
Publication Date:
February 10, 2011
Filing Date:
June 30, 2010
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
SUMIYA SHIGEAKI (JP)
MIYOSHI MAKOTO (JP)
SUGIYAMA TOMOHIKO (JP)
ICHIMURA MIKIYA (JP)
KURAOKA YOSHITAKA (JP)
TANAKA MITSUHIRO (JP)
SUMIYA SHIGEAKI (JP)
MIYOSHI MAKOTO (JP)
SUGIYAMA TOMOHIKO (JP)
ICHIMURA MIKIYA (JP)
KURAOKA YOSHITAKA (JP)
TANAKA MITSUHIRO (JP)
International Classes:
H01L21/205; C23C16/34; H01L21/338; H01L29/47; H01L29/778; H01L29/812; H01L29/872
Foreign References:
| JP2007250721A | 2007-09-27 |
Other References:
A. ABLE ET AL.: "Growth of crack-free GaN on Si(1 1 1) with qraded AlGaN buffer layers", JOURNAL OF CRYSTAL GROWTH, vol. 276, no. 3-4, 1 April 2005 (2005-04-01), pages 415 - 418
YUAN LU ET AL.: "Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(1 1 1) substrate", JOURNAL OF CRYSTAL GROWTH, vol. 263, no. 1-4, 1 March 2004 (2004-03-01), pages 4 - 11
P. CHEN ET AL.: "Growth of high quality GaN layers with AlN buffer on Si(l 1 1) substrates", JOURNAL OF CRYSTAL GROWTH, vol. 225, no. 2-4, May 2001 (2001-05-01), pages 150 - 154, XP004242403, DOI: doi:10.1016/S0022-0248(01)00842-9
YUAN LU ET AL.: "Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(1 1 1) substrate", JOURNAL OF CRYSTAL GROWTH, vol. 263, no. 1-4, 1 March 2004 (2004-03-01), pages 4 - 11
P. CHEN ET AL.: "Growth of high quality GaN layers with AlN buffer on Si(l 1 1) substrates", JOURNAL OF CRYSTAL GROWTH, vol. 225, no. 2-4, May 2001 (2001-05-01), pages 150 - 154, XP004242403, DOI: doi:10.1016/S0022-0248(01)00842-9
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
Hidetoshi Yoshitake (JP)
Hidetoshi Yoshitake (JP)
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