ETCHING APPARATUS

WIPO Patent Application WO/2011/155479

A1

Disclosed is an etching apparatus (1) which comprises: an etching gas supply unit (10c) which supplies an etching gas into a vacuum chamber (10); a first electrode (12) which is disposed in the vacuum chamber and on the upper surface of which a substrate (Sb) is mounted; a second electrode (16) which faces the first electrode with a plasma generation space (S) lying therebetween; and a high-frequency power supply (20) which supplies high-frequency electric power to the first electrode. The etching apparatus additionally comprises an insulating unit (30) which covers at least a region of the inner surface (10d) of the vacuum chamber, in said region the relative distance from the first electrode being not more than the interelectrode distance (G) between the first electrode and the second electrode. The insulating unit (30) comprises a lateral surface (31d) that surrounds the substrate mounted on the first electrode or the second electrode, and the lateral surface includes a tapered portion (31f), the internal diameter of which increases toward the plasma generation space (S).

JP4044218	Plasma processing equipment
JP2012226888	PLASMA PROCESSING APPARATUS
JP2611001	INDUSTRIAL APPLICABILITY: Method for determining end point and apparatus

MORIKAWA YASUHIRO (JP)
MIURA YUTAKA (JP)
ISHIKAWA MICHIO (JP)

PCT/JP2011/063017

December 15, 2011

June 07, 2011

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ULVAC INC (JP)
MORIKAWA YASUHIRO (JP)
MIURA YUTAKA (JP)
ISHIKAWA MICHIO (JP)

H01L21/3065

JP2000082698A	2000-03-21
JPH11297675A	1999-10-29
JP2007294722A	2007-11-08
JP2006140423A	2006-06-01

ONDA, Hironori et al. (JP)
Hironori Onda (JP)

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