Title:
ETCHING GAS, METHOD FOR PRODUCING SAME, ETCHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2022/080271
Kind Code:
A1
Abstract:
Provided are an etching gas and etching method making it possible to selectively etch an etching target that contains silicon, more than etching with respect to a non-etching target. The etching gas contains a fluorobutene represented by general formula C4ＨxFy, where x is 1 to 7, y is 1 to 7, and x+y is 8. The etching gas also contains carbonyl fluoride as an impurity, the concentration of carbonyl fluoride being 100 mass ppm or less. The etching method comprises an etching step for: bringing an etching gas into contact with a member to be etched (12) that includes an etching target which is to be etched with the etching gas and a non-etching target which is not to be etched with the etching gas; and etching the etching target more selectively than the non-etching target. The etching target contains silicon.
Inventors:
SUZUKI ATSUSHI (JP)
Application Number:
PCT/JP2021/037425
Publication Date:
April 21, 2022
Filing Date:
October 08, 2021
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
International Classes:
H01L21/3065
Domestic Patent References:
| WO2017169809A1 | 2017-10-05 |
Foreign References:
| JP2015533029A | 2015-11-16 | |||
| JP2017092357A | 2017-05-25 | |||
| JP2014185111A | 2014-10-02 |
Attorney, Agent or Firm:
TANAKA Hidetetsu et al. (JP)
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