Title:
ETCHING GAS, METHOD FOR PRODUCING SAME, ETCHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2022/080272
Kind Code:
A1
Abstract:
The present invention provides: an etching gas which is capable of selectively etching an etching object that contains silicon over a non-etching object; and an etching method. This etching gas contains a fluorobutene which is represented by general formula C4HxFy, wherein x is from 1 to 7, y is from 1 to 7 and (x + y) is 8. This etching gas contains hydrogen fluoride as an impurity; and the concentration of the hydrogen fluoride is 100 ppm by mass or less. An etching method according to the present invention comprises an etching step wherein an etching gas is brought into contact with a member (12) to be etched, said member comprising an etching object, which is an object to be etched by the etching gas, and a non-etching object, which is not an object to be etched by the etching gas, so that the etching object is selectively etched over the non-etching object. The etching object contains silicon.
Inventors:
SUZUKI ATSUSHI (JP)
Application Number:
PCT/JP2021/037426
Publication Date:
April 21, 2022
Filing Date:
October 08, 2021
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
International Classes:
H01L21/3065
Domestic Patent References:
| WO2016152988A1 | 2016-09-29 | |||
| WO2014203842A1 | 2014-12-24 |
Foreign References:
| JP2009206444A | 2009-09-10 | |||
| JP2002047218A | 2002-02-12 |
Attorney, Agent or Firm:
TANAKA Hidetetsu et al. (JP)
Download PDF: