Title:
ETCHING METHOD FOR CONTROLLING MICRO-LOADING EFFECT OF DEPTH OF SHALLOW TRENCHES
Document Type and Number:
WIPO Patent Application WO/2015/074621
Kind Code:
A1
Abstract:
An etching method for controlling the micro-loading effect of the depth of shallow trenches comprises the following steps: etching the mask layers on the wafer entering a process chamber, until the openings on the wafer contact with the Si substrate of the wafer; feeding deposition gases into the process chamber to carry out deposition reaction, in order to deposit a layer of polymer-like film preventing from thickness etching; feeding inert gases into the process chamber and processing the polymer-like film under the condition of plasma excitation; carrying out a shallow trenching etching process on the wafer till the predetermined depth. It can effectively reduce or eliminate the micro-loading effect of etching depth during the etching of the trenches, need no additional processes with simple operation and relatively short elapsed-time, and furthermore can adjust with great flexibility by controlling the process parameter, such as time, for special equipment process.
Inventors:
FU YALI (CN)
LI GUORONG (CN)
YANG MENG (CN)
LI GUORONG (CN)
YANG MENG (CN)
Application Number:
PCT/CN2014/092156
Publication Date:
May 28, 2015
Filing Date:
November 25, 2014
Export Citation:
Assignee:
BEIJING NMC CO LTD (CN)
International Classes:
H01L21/02; H01L21/306
Foreign References:
| CN102810470A | 2012-12-05 | |||
| CN101730930A | 2010-06-09 | |||
| CN1956163A | 2007-05-02 | |||
| US20040077176A1 | 2004-04-22 | |||
| JP2009032872A | 2009-02-12 |
Attorney, Agent or Firm:
TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
北京天昊联合知识产权代理有限公司 (CN)
北京天昊联合知识产权代理有限公司 (CN)
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