Title:
ETCHING METHOD AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2022/085520
Kind Code:
A1
Abstract:
The present invention selectively etches an etching object over a non-etching object, while suppressing damage to an etching device. An etching method according to the present invention comprises an etching step wherein an etching gas, which contains nitrosyl fluoride and has been excited into a plasma, is brought into contact with a member (9) to be etched, said member comprising an etching object and a non-etching object, so that the etching object is selectively etched over the non-etching object. The etching step is carried out within a chamber (7) that contains the member (9) to be etched, and a remote plasma generation device (16) that is provided outside the chamber (7) is used as a plasma generation source. The concentration of the nitrosyl fluoride in the etching gas is 0.3% by volume or more; the temperature during the etching step is from 0°C to 250°C, while the pressure during the etching step is from 100 Pa to 3 kPa; and the etching object contains silicon nitride.
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Inventors:
IWASAKI JUMPEI (JP)
TANIMOTO YOSUKE (JP)
MATSUI KAZUMA (JP)
TANIMOTO YOSUKE (JP)
MATSUI KAZUMA (JP)
Application Number:
PCT/JP2021/037774
Publication Date:
April 28, 2022
Filing Date:
October 12, 2021
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
International Classes:
H01L21/3065
Foreign References:
| US20190206696A1 | 2019-07-04 | |||
| JP2014236055A | 2014-12-15 | |||
| JP2000003901A | 2000-01-07 | |||
| JP2004266077A | 2004-09-24 |
Attorney, Agent or Firm:
TANAKA Hidetetsu et al. (JP)
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