Title:
EVALUATION METHOD FOR SILICON CARBIDE SUBSTRATES
Document Type and Number:
WIPO Patent Application WO/2022/092165
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing a novel evaluation method suitable for large-diameter SiC substrates. The present invention is an evaluation method for SiC substrates, the method being characterized by: including an image acquisition step for acquiring an image I by projecting onto a SiC substrate 10 an electron beam PE inclined at an incident angle θ with respect to a normal N that is normal to (0001) plane of the SiC substrate 10; and the incident angle θ being at most 10 degrees.
Inventors:
KANEKO TADAAKI (JP)
DOJIMA DAICHI (JP)
DOJIMA DAICHI (JP)
Application Number:
PCT/JP2021/039698
Publication Date:
May 05, 2022
Filing Date:
October 27, 2021
Export Citation:
Assignee:
KWANSEI GAKUIN EDUCATIONAL FOUND (JP)
TOYOTA TSUSHO CORP (JP)
TOYOTA TSUSHO CORP (JP)
International Classes:
C30B29/36; H01L21/66
Domestic Patent References:
| WO2019058440A1 | 2019-03-28 |
Foreign References:
| JP2017199540A | 2017-11-02 | |||
| JP2015179082A | 2015-10-08 | |||
| JP2019158888A | 2019-09-19 |
Attorney, Agent or Firm:
TSUJITA, Tomoko et al. (JP)
Download PDF:
Previous Patent: PACKAGING BAG
Next Patent: HEAT TREATMENT ENVIRONMENT EVALUATION METHOD AND SILICON CARBIDE SUBSTRATE
Next Patent: HEAT TREATMENT ENVIRONMENT EVALUATION METHOD AND SILICON CARBIDE SUBSTRATE