EVENT DETECTION ELEMENT AND ELECTRONIC DEVICE

WIPO Patent Application WO/2022/196096

A1

Provided is an event detection element with which it is possible to expand dynamic range. This event detection element comprises a plurality of pixels, each of which outputs an event detection signal indicating the detection result of whether the change in the amount of incident light received exceeds a prescribed threshold value. Each of the plurality of pixels is provided with: a substrate having a first-electroconductivity-type support layer, an embedded oxide film layered on the light-incident side of the support layer, and a silicon layer layered on the light-incident side of the embedded oxide film; a second-electroconductivity-type photoelectric conversion unit that is formed from the silicon layer to the support layer and that generates a charge that corresponds to the amount of incident light received, the second electroconductivity type being the inverse of the first electroconductivity type; a logarithmic conversion transistor that is positioned on the silicon layer and that converts a light current produced due to the charge generated by the photoelectric conversion unit to a logarithmic voltage signal; and a separation unit that insulates and separates the photoelectric conversion unit and the logarithmic conversion transistor from each other. The logarithmic conversion transistor is a tunnel field effect transistor having a first-electroconductivity-type source.

HANADA TAKUYA (JP)
NAKAMURA MAKOTO (JP)
TSUCHIMOTO KOYA (JP)
MURAKAWA YUSUKE (JP)

PCT/JP2022/002199

September 22, 2022

January 21, 2022

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SONY SEMICONDUCTOR SOLUTIONS CORP (JP)

H04N5/3745; H01L27/146; H04N5/355; H04N5/369

WO2019087471A1

2019-05-09

JP2020068484A	2020-04-30
JP2016533140A	2016-10-20

TANAKA Hidetetsu et al. (JP)

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