Title:
EXCESS LIGHT AMOUNT DETECTION CIRCUIT, LIGHT RECEIVING ELEMENT, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/085290
Kind Code:
A1
Abstract:
An excess light amount detection circuit (1) according to the present invention is provided with a MOS transistor and a high-impedance element (Ca). The MOS transistor (Mn1) has a source thereof connected to a vertical signal line (VSL) of an image sensor. The high-impedance element (Ca) is connected to the drain of the MOS transistor (Mn1). This excess light amount detection circuit (1) detects a change in electrical potential of the vertical signal line (VSL) by means of an electrical potential prescribed by a gate potential of the MOS transistor (Mn1), and outputs the electrical potential at a contact point between the drain of the MOS transistor (Mn1) and the high-impedance element (Ca) in the form of a signal indicating a detection result of an excess light amount.
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Inventors:
KUSUDA JYUNICHIROU (JP)
Application Number:
PCT/JP2020/039681
Publication Date:
May 06, 2021
Filing Date:
October 22, 2020
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H04N5/359; H04N5/3745
Foreign References:
| JP2007036916A | 2007-02-08 | |||
| JP2019057873A | 2019-04-11 | |||
| JP2013084991A | 2013-05-09 | |||
| JP2008283557A | 2008-11-20 |
Other References:
See also references of EP 4054176A4
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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