Title:
FABRICATION METHOD FOR SEMICONDUCTOR MEMORY AND SEMICONDUCTOR MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/279484
Kind Code:
A1
Abstract:
The present application relates to the technical field of storage devices, and provides a fabrication method for a semiconductor memory and a semiconductor memory. The fabrication method for the semiconductor memory comprises: providing a substrate, wherein a plurality of active regions arranged at intervals are provided in the substrate, and the active regions comprise first contact regions and second contact regions; forming a protrusion on each of the second contact regions; forming a plurality of bit line structures arranged at intervals on the substrate; forming a first isolation layer which covers the bit line structures and the substrate, wherein each fill hole of the first isolation layer exposes one protrusion, and the surface area of the protrusion exposed in the fill hole is larger than the overlapping area of the orthographic projection of the fill hole on the substrate and the second contact regions; and forming wires in the fill holes, the wires being electrically connected to the protrusions. By means of forming protrusions on the substrate and electrically connecting the protrusions to the wires, the contact area between the wires and the protrusions is increased while the depth of the fill holes is reduced, and the wires formed in the fill holes have fewer holes or gaps.
More Like This:
Inventors:
LIU XIANG (CN)
Application Number:
PCT/CN2021/113067
Publication Date:
January 12, 2023
Filing Date:
August 17, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/8242
Foreign References:
| CN102117765A | 2011-07-06 | |||
| CN112582414A | 2021-03-30 | |||
| CN101989591A | 2011-03-23 | |||
| CN108110005A | 2018-06-01 | |||
| US20130320558A1 | 2013-12-05 |
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (CN)
Download PDF: