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Title:
FBAR RESONATOR, PREPARATION METHOD THEREFOR, AND APPLICATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2022/222450
Kind Code:
A1
Abstract:
The present invention belongs to the technical field of resonator preparation. Disclosed are an FBAR resonator and a preparation method therefor. The preparation method for the FBAR resonator comprises: preparing a germanium thin film; performing selective processing of an FBAR resonator substrate; forming silicon nanowires in a substrate groove; performing lower electrode formation on the silicon nanowire-containing FBAR resonator substrate; and preparing the FBAR resonator. According to the FBAR resonator provided in the present invention, only two piezoelectric layers need to be prepared, the preparation method is simple, and the operation is simple. Graphite is used as a transitional layer between a single-crystal silicon substrate and a germanium thin film, so that lattice mismatch between silicon and germanium can be eliminated, and a reduction in the quality of the germanium thin film due to the mismatch of thermal expansion coefficients is abated, thereby reducing the defect density of the germanium thin film. A graphite layer and the germanium thin film are prepared by means of a magnetron sputtering method and a chemical vapor deposition method, so that the reflection effect of the FBAR resonator is enhanced while costs are reduced.

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Inventors:
WU XIUSHAN (CN)
CUI JIAMIN (CN)
YAO WEI (CN)
PENG TAO (CN)
XU LIN (CN)
ZHANG GUOQIN (CN)
YAN SHUBIN (CN)
Application Number:
PCT/CN2021/130828
Publication Date:
October 27, 2022
Filing Date:
November 16, 2021
Export Citation:
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Assignee:
ZHEJIANG UNIV OF WATER RESOURCES AND ELECTRIC (CN)
International Classes:
H03H9/17; H03H3/02; H03H9/02
Foreign References:
CN112087217A2020-12-15
CN104157730A2014-11-19
CN102496563A2012-06-13
CN113315488A2021-08-27
CN109039296A2018-12-18
EP2330737A12011-06-08
Attorney, Agent or Firm:
BEIJING DONGFANG SHENGFAN IP AGENT FIRM GP (CN)
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