Title:
FERROELECTRIC MEMORY AND FORMATION METHOD THEREFOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/024101
Kind Code:
A1
Abstract:
Embodiments of the present application provide a ferroelectric memory and a formation method therefor, and an electronic device provided with the ferroelectric memory. The present invention is mainly used for suppressing diffusion of oxygen in a ferroelectric layer. The ferroelectric memory comprises: a substrate and a plurality of storage units formed on the substrate; each storage unit comprises a ferroelectric capacitor; the ferroelectric capacitor comprises a first electrode and a second electrode, and the ferroelectric layer formed between the first electrode and the second electrode; and the ferroelectric capacitor further comprises a first isolation passivation layer formed between the first electrode and the ferroelectric layer, and a second isolation passivation layer formed between the second electrode and the ferroelectric layer, wherein the first isolation passivation layer is used for suppressing the oxygen in the ferroelectric layer from diffusing into the first electrode, and the second isolation passivation layer is used for suppressing the oxygen in the ferroelectric layer from diffusing into the second electrode. In this way, the first isolation passivation layer and the second isolation passivation layer are used as a protective barrier to achieve effects of isolating and protecting the ferroelectric layer, thereby preventing diffusion of the oxygen in the ferroelectric layer.
Inventors:
TAN WANLIANG (CN)
LI YUXING (CN)
LI WEIGU (CN)
CAI JIALIN (CN)
LV HANGBING (CN)
XU JEFFREY JUNHAO (CN)
LI YUXING (CN)
LI WEIGU (CN)
CAI JIALIN (CN)
LV HANGBING (CN)
XU JEFFREY JUNHAO (CN)
Application Number:
PCT/CN2021/115134
Publication Date:
March 02, 2023
Filing Date:
August 27, 2021
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
G11C11/22
Foreign References:
| US20070045689A1 | 2007-03-01 | |||
| US20080020489A1 | 2008-01-24 |
Other References:
"Doctoral Dissertation", 1 December 2013, XIANGTAN UNIVERSITY, CN, article YANG, QIONG: "First-principles Study of Interface and Strain Effects in Ferroelectric Film for Memory Application", pages: 1 - 146, XP009544008
QIAO WANG, ZHAO YULING, YANG JIANGUO, LIU CHAO, JIANG PENGFEI, DING QINGTING, GONG TIANCHENG, LUO QING, LV HANGBING, LIU MING: "Non-volatile In Memory Dual-Row X(N)OR Operation with Write Back Circuit Based on 1T1C FeRAM", 2020 IEEE 15TH INTERNATIONAL CONFERENCE ON SOLID-STATE & INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), IEEE, 3 November 2020 (2020-11-03) - 6 November 2020 (2020-11-06), pages 1 - 3, XP093039755, ISBN: 978-1-7281-6235-5, DOI: 10.1109/ICSICT49897.2020.9278353
QIAO WANG, ZHAO YULING, YANG JIANGUO, LIU CHAO, JIANG PENGFEI, DING QINGTING, GONG TIANCHENG, LUO QING, LV HANGBING, LIU MING: "Non-volatile In Memory Dual-Row X(N)OR Operation with Write Back Circuit Based on 1T1C FeRAM", 2020 IEEE 15TH INTERNATIONAL CONFERENCE ON SOLID-STATE & INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), IEEE, 3 November 2020 (2020-11-03) - 6 November 2020 (2020-11-06), pages 1 - 3, XP093039755, ISBN: 978-1-7281-6235-5, DOI: 10.1109/ICSICT49897.2020.9278353
Attorney, Agent or Firm:
BEIJING ZBSD PATENT&TRADEMARK AGENT LTD. (CN)
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