FIELD EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM

Title:

FIELD EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM

Document Type and Number:

WIPO Patent Application WO/2017/159810

Kind Code:

A1

Abstract:

A field effect transistor has: a gate electrode for applying a gate voltage; a source electrode and a drain electrode for transmitting electrical signals; an active layer formed between the source electrode and the drain electrode; and a gate insulating layer formed between the gate electrode and the active layer, the field effect transistor being characterized in that the active layer includes at least two types of oxide layer, an A layer and a B layer; and the active layer satisfies condition (1) and/or (2) noted below. Condition (1): The active layer is composed of three or more oxide layers, including two or more of the A layer. Condition (2): The bandgap of the A layer is smaller than the bandgap of the B layer, and the oxygen affinity of the A layer is equal to or greater than the oxygen affinity of the B layer.

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Inventors:

UEDA NAOYUKI (JP)
NAKAMURA YUKI (JP)
ABE YUKIKO (JP)
MATSUMOTO SHINJI (JP)
SONE YUJI (JP)
SAOTOME RYOICHI (JP)
ARAE SADANORI (JP)
KUSAYANAGI MINEHIDE (JP)

Application Number:

PCT/JP2017/010747

Publication Date:

September 21, 2017

Filing Date:

March 16, 2017

Export Citation:

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Assignee:

RICOH CO LTD (JP)
UEDA NAOYUKI (JP)
NAKAMURA YUKI (JP)
ABE YUKIKO (JP)
MATSUMOTO SHINJI (JP)
SONE YUJI (JP)
SAOTOME RYOICHI (JP)
ARAE SADANORI (JP)
KUSAYANAGI MINEHIDE (JP)

International Classes:

H01L29/786; G09F9/30; H01L51/50; H05B33/02; H05B33/14

Foreign References:

JP2013225551A	2013-10-31
JP2015037164A	2015-02-23
JP2012059860A	2012-03-22
JP2013207100A	2013-10-07
JP2015046568A	2015-03-12

Other References: