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Title:
FILM BULK ACOUSTIC RESONATOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/232763
Kind Code:
A1
Abstract:
A film bulk acoustic resonator and a manufacturing method therefor. The film bulk acoustic resonator comprises: a carrier substrate (100); a supporting layer (102) bonded to the carrier substrate (100), the supporting layer (102) enclosing a first cavity (110a), and the first cavity (110a) exposing the carrier substrate (100); a piezoelectric laminated structure located above the supporting layer (102) and covering the first cavity (110a), the piezoelectric laminated structure comprising, from bottom to top, a first electrode (103), a piezoelectric layer (104), and a second electrode (105) laminated in sequence, and a region located above the first cavity (110a) where the first electrode (103), the piezoelectric layer (104) and the second electrode (105) overlap one another in a direction perpendicular to the surface of the piezoelectric layer (104) forming an effective resonance region of the resonator. A first protrusion (40a) and a second protrusion (40b) are provided at the boundary of the effective resonance region, the first protrusion (40a) is located on the side where the first electrode (103) is located, the second protrusion (40b) is located on the side where the second electrode (105) is located, the projection of the first protrusion (40a) and/or the projection of the second protrusion (40b) on a plane where the piezoelectric layer (104) is located comprise/comprises a loop, and the loop comprises an open loop or a closed loop.

Inventors:
HUANG, Herb He (CN)
LUO, Hailong (CN)
LI, Wei (CN)
Application Number:
PCT/CN2020/135646
Publication Date:
November 25, 2021
Filing Date:
December 11, 2020
Export Citation:
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Assignee:
NINGBO SEMICONDUCTOR INTERNATIONAL CORPORATION (SHANGHAI BRANCH) (CN)
International Classes:
H03H3/02; H03H3/04; H03H9/17; H03H9/02
Attorney, Agent or Firm:
BEIJING SICHUANG DACHENG INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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