Title:
FILM FORMATION METHOD AND FILM FORMATION DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/070917
Kind Code:
A1
Abstract:
A film formation method according to one embodiment of the present disclosure has: a step for preparing a substrate that has a protrusion on the surface thereof, the protrusion having a side surface and a top surface; a step for depositing a film in a region that includes the side surface and the top surface; a step for exposing the film to plasma and causing the film deposited on the top surface to have a higher density than that on the side surface; and a step for selectively forming a film on the top surface by removing at least the film deposited on the side surface.
Inventors:
HASEGAWA TOSHIO (JP)
Application Number:
PCT/JP2021/033911
Publication Date:
April 07, 2022
Filing Date:
September 15, 2021
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/31; C23C16/04; H01L21/316; H01L21/318
Foreign References:
| JP2019134062A | 2019-08-08 | |||
| US20180286663A1 | 2018-10-04 | |||
| JPH0722339A | 1995-01-24 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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