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Title:
FILM FORMING METHOD AND FILM FORMING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2020/091016
Kind Code:
A1
Abstract:
This film forming method forms a film on a base material surface that comprises a first region where a metal or a semiconductor is exposed and a second region where an insulating body is exposed; and this film forming method comprises an SAM formation step wherein a self-assembled monomolecular film of a perfluoropolyether group-containing compound is formed in the first region, and a film growth step wherein a predetermined film is formed in the second region after the execution of the SAM formation step.

Inventors:
FUSE TAKASHI (JP)
NAMIKAWA TAKASHI (JP)
Application Number:
PCT/JP2019/042929
Publication Date:
May 07, 2020
Filing Date:
October 31, 2019
Export Citation:
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Assignee:
TOKYO ELECTRON LTD (JP)
DAIKIN IND LTD (JP)
International Classes:
C23C14/12; C23C14/04; C23C16/04; C23C26/00; H01L21/027
Domestic Patent References:
WO2017151639A12017-09-08
Foreign References:
JP2013154315A2013-08-15
JP2018078102A2018-05-17
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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