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Title:
FILM FORMING METHOD AND FILM FORMING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2023/080004
Kind Code:
A1
Abstract:
A film forming method according to the present disclosure comprises: a step in which a substrate is placed on a stage that is arranged within a process chamber; a step in which a processing gas, which contains a silicon-containing gas and a nitrogen-containing gas, is supplied into the process chamber; and a step in which a first power having a first frequency that is higher than 300 MHz and a second power having a second frequency that is lower than the first frequency are superimposed on each other and applied to electrodes that face the stage, thereby changing the processing gas into a plasma within the process chamber so as to form a silicon nitride film on the substrate.

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Inventors:
KANEKO MIYAKO (JP)
SUZUKI NAOKO (JP)
Application Number:
PCT/JP2022/039560
Publication Date:
May 11, 2023
Filing Date:
October 24, 2022
Export Citation:
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Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/318; C23C16/42; C23C16/509; H01L21/31
Foreign References:
JP2000164582A2000-06-16
JP2006303431A2006-11-02
JP2009141329A2009-06-25
JP2010225751A2010-10-07
JP2009260297A2009-11-05
JP2020064924A2020-04-23
JPH05275346A1993-10-22
Attorney, Agent or Firm:
YAYOY PATENT OFFICE (JP)
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