Title:
FILM FORMING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, FILM FORMING DEVICE, AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/209081
Kind Code:
A1
Abstract:
This method for forming a group V metal nitride film on a substrate includes: providing a substrate in a processing container; and alternately feeding, into the processing container, a raw material gas including a group V metal and a reducing gas including a gas that contains nitrogen, and forming a group V metal nitride film on the substrate.
Inventors:
ASHIZAWA HIROAKI (JP)
NAKAMURA HIDEO (JP)
SERIZAWA YOSUKE (JP)
IDENO YOSHIKAZU (JP)
NAKAMURA HIDEO (JP)
SERIZAWA YOSUKE (JP)
IDENO YOSHIKAZU (JP)
Application Number:
PCT/JP2020/013597
Publication Date:
October 15, 2020
Filing Date:
March 26, 2020
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
C23C16/34; C23C16/455
Foreign References:
| JP2010199449A | 2010-09-09 | |||
| US20180212019A1 | 2018-07-26 | |||
| CN103456614A | 2013-12-18 |
Other References:
ISAKOV ET AL.: "Wide-band black silicon with atomic layer deposited NbN", NANOTECHNOLOGY, vol. 29, 2018, pages 335303, XP020329609, DOI: 10.1088/1361-6528/aac738
Attorney, Agent or Firm:
TAKAYAMA Hiroshi (JP)
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