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Title:
FILM FORMING METHOD FOR SIC FILM
Document Type and Number:
WIPO Patent Application WO/2018/105349
Kind Code:
A1
Abstract:
A film forming method for forming an SiC film on an object to be processed by an ALD method comprises: an activation step wherein the surface of the object to be processed is activated by means of an activation gas plasma that is obtained by exciting an activation gas into a plasma; and a film formation step wherein an SiC film is formed by supplying a starting material gas, which contains a precursor represented by general formula RSiX1 3 or RSiHClX2 to the object to be processed, the surface of which is activated by the activation step. In the general formulae, R represents an organic group having an unsaturated bond; X1 represents an element selected from among H, F, Cl, Br and I; and X2 represents an element selected from among Cl, Br and I.

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Inventors:
KATOU TAIKI (JP)
AZUMO SHUJI (JP)
KASHIWAGI YUSAKU (JP)
Application Number:
PCT/JP2017/041237
Publication Date:
June 14, 2018
Filing Date:
November 16, 2017
Export Citation:
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Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/314; C23C16/02; C23C16/42; H01L21/20; H01L21/205
Foreign References:
JPH03101123A1991-04-25
JPH0267720A1990-03-07
JPH05267190A1993-10-15
JPH01234314A1989-09-19
JPH0282615A1990-03-23
JP2016174141A2016-09-29
Attorney, Agent or Firm:
KANEMOTO, Tetsuo et al. (JP)
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