Title:
FILM STRUCTURE AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/145059
Kind Code:
A1
Abstract:
This film structure (10) comprises: a substrate which is an Si substrate or an SOI substrate; a buffer film which is formed on the substrate and contains ZrO2; and a piezoelectric film (11) which is formed on the buffer film. With respect to this film structure, the polarization direction of the piezoelectric film (11) is preferentially oriented in a direction that is parallel to the substrate.
More Like This:
Inventors:
KONISHI AKIO (JP)
KANAMORI HIROAKI (JP)
ANDO AKIRA (JP)
HONDA YUUJI (JP)
KANAMORI HIROAKI (JP)
ANDO AKIRA (JP)
HONDA YUUJI (JP)
Application Number:
PCT/JP2021/012854
Publication Date:
July 07, 2022
Filing Date:
March 26, 2021
Export Citation:
Assignee:
MICROINNOVATORS LABORATORY INC (JP)
International Classes:
H01L41/047; H01L41/09; H01L41/113; H01L41/187; H03H9/17
Foreign References:
| JPH10190086A | 1998-07-21 | |||
| JP2012160621A | 2012-08-23 | |||
| JP2014197695A | 2014-10-16 | |||
| JP2019201400A | 2019-11-21 | |||
| JP2015201887A | 2015-11-12 | |||
| JP2003198319A | 2003-07-11 |
Other References:
YUKIHIRO KANECHIKA: "Technology Trend of High Heat Dissipation AlN Substrate for Semiconductor Device", JOURNAL OF JAPAN INSTITUTE OF ELECTRONICS PACKAGING, vol. 15, no. 3, 2012, pages 185 - 189, XP055894441, DOI: 10.5104/jiep.15.185
Attorney, Agent or Firm:
TANAKA, Shinichiro (JP)
Download PDF:
Previous Patent: TRANSMISSION STATION AND RECEPTION STATION
Next Patent: INFORMATION PROCESSING SYSTEM AND INFORMATION PROCESSING METHOD
Next Patent: INFORMATION PROCESSING SYSTEM AND INFORMATION PROCESSING METHOD