GaN EPITAXIAL SUBSTRATE - MITSUBISHI CHEM CORP

Title:

GaN EPITAXIAL SUBSTRATE

Document Type and Number:

WIPO Patent Application WO/2023/176744

Kind Code:

A1

Abstract:

The present invention relates to a GaN epitaxial substrate comprising: a GaN substrate; and a GaN buffer layer epitaxially grown on the GaN substrate, wherein: the GaN epitaxial substrate includes a point A that exists in the GaN substrate or in the GaN buffer layer, and a point B that exists in the GaN buffer layer and has an Fe concentration that is 1/100 of the Fe concentration of the point A; and the distance between the point A and the point B is at most 0.2 μm.

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Inventors:

ISO KENJI (JP)
TOKUMITSU YOUJI (JP)

Application Number:

PCT/JP2023/009462

Publication Date:

September 21, 2023

Filing Date:

March 10, 2023

Export Citation:

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Assignee:

MITSUBISHI CHEM CORP (JP)

International Classes:

C30B29/38; C30B25/20; H01L21/20; H01L21/338; H01L29/778; H01L29/812

Foreign References:

JP2018041786A	2018-03-15
JP2016511545A	2016-04-14
JP2015207624A	2015-11-19
US20130075786A1	2013-03-28

Attorney, Agent or Firm:

EIKOH, P.C. (JP)

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