Title:
GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2007/069590
Kind Code:
A1
Abstract:
Disclosed are a gallium nitride compound semiconductor light-emitting device
having excellent light-extraction efficiency, and a method for manufacturing
such a gallium nitride compound semiconductor light-emitting device. Specifically
disclosed is a gallium nitride compound semiconductor light-emitting device
wherein an n-type semiconductor layer (13) composed of a gallium nitride compound
semiconductor, a light-emitting layer (14) and a p-type semiconductor layer
(15) are arranged on a substrate (11) in this order. A light-transmitting positive
electrode (16) is arranged on the p-type semiconductor layer (15) and a positive
electrode bonding pad (17) is formed on the light-transmitting positive electrode
(16), while a negative electrode bonding pad (18) is formed on the n-type semiconductor
layer (13). In this gallium nitride compound semiconductor light-emitting
device, a surface (16a) of the light-transmitting positive electrode (16) at
least partially has an irregular rough surface.
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Inventors:
SHINOHARA HIRONAO (JP)
OSAWA HIROSHI (JP)
OSAWA HIROSHI (JP)
Application Number:
PCT/JP2006/324733
Publication Date:
June 21, 2007
Filing Date:
December 12, 2006
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
SHINOHARA HIRONAO (JP)
OSAWA HIROSHI (JP)
SHINOHARA HIRONAO (JP)
OSAWA HIROSHI (JP)
International Classes:
H01L33/06; H01L33/22; H01L33/32; H01L33/42
Foreign References:
| JP2005223329A | 2005-08-18 | |||
| JP2005197506A | 2005-07-21 | |||
| JP2005005679A | 2005-01-06 | |||
| JP2003218383A | 2003-07-31 | |||
| JPH0778807A | 1995-03-20 | |||
| JPH06310428A | 1994-11-04 |
Other References:
See also references of EP 1965441A4
Attorney, Agent or Firm:
SHIGA, Masatake et al. (Yaesu Chuo-k, Tokyo 53, JP)
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