Title:
GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2007/145300
Kind Code:
A1
Abstract:
Provided is a gallium nitride compound semiconductor light emitting element
which has excellent light extraction efficiency and has a rectangular high light
emission flat plane with shorter and longer sides. The gallium nitride compound
semiconductor light emitting element is composed of a substrate, and a gallium
nitride compound semiconductor layer stacked on the substrate. The light emitting
element is characterized in that the flat plane shape of the light emitting element
is rectangular with longer and shorter sides and that the side plane of the gallium
nitride compound semiconductor layer is not vertical to the substrate main plane.
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Inventors:
MURAKI NORITAKA (JP)
WATANABE MUNETAKA (JP)
WATANABE MUNETAKA (JP)
Application Number:
PCT/JP2007/062063
Publication Date:
December 21, 2007
Filing Date:
June 08, 2007
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
MURAKI NORITAKA (JP)
WATANABE MUNETAKA (JP)
MURAKI NORITAKA (JP)
WATANABE MUNETAKA (JP)
International Classes:
H01L33/06; H01L21/306; H01L33/16; H01L33/22; H01L33/32; H01L33/38; H01L33/42; H01L33/62
Foreign References:
| JP2004281445A | 2004-10-07 | |||
| JP2006086489A | 2006-03-30 | |||
| JP2005150673A | 2005-06-09 | |||
| JP2006093594A | 2006-04-06 | |||
| JPH10189480A | 1998-07-21 | |||
| JP2001320091A | 2001-11-16 | |||
| JP2005019646A | 2005-01-20 | |||
| JP2004221529A | 2004-08-05 | |||
| JPH0326087B2 | 1991-04-09 | |||
| JPH04297023A | 1992-10-21 | |||
| JP2003243302A | 2003-08-29 |
Other References:
See also references of EP 2031665A4
Attorney, Agent or Firm:
AOKI, Atsushi et al. (Toranomon 37 Mori Bldg.5-1, Toranomon 3-chom, Minato-ku Tokyo, JP)
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