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Patent Searching and Data


Title:
GAS BARRIER FILM AND METHOD FOR MANUFACTURING GAS BARRIER FILM
Document Type and Number:
WIPO Patent Application WO/2023/189516
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing a gas barrier film that has high gas barrier property and high surface elasticity and that also has excellent heat and humidity resistance, a gas barrier film that has less pin holes over an entire surface thereof and has high gas barrier property, and a method for manufacturing the gas barrier films. A first gas barrier film comprises a gas barrier layer containing silicon and oxygen, contains silicon, oxygen, and nitrogen in a thickness direction of the gas barrier layer, and has a region in which the elemental ratio of nitrogen is 5 at% or more, the region having a thickness dM of 30 nm or more. A second gas barrier film comprises a gas barrier layer containing silicon and oxygen, wherein, when the gas barrier film having a prescribed size is divided into a prescribed number of sections, the number of sections having a moisture vapor transmission rate of less than 1.0 × 10-3 g/m2/day accounts for a prescribed proportion or more under a prescribed condition.

Inventors:
SHINDO NANA (JP)
NAGANAWA SATOSHI (JP)
Application Number:
PCT/JP2023/009751
Publication Date:
October 05, 2023
Filing Date:
March 14, 2023
Export Citation:
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Assignee:
LINTEC CORP (JP)
International Classes:
B32B9/00; B32B27/00; C08J7/048
Domestic Patent References:
WO2014007277A12014-01-09
WO2015098671A12015-07-02
WO2013035432A12013-03-14
Foreign References:
JP2019010733A2019-01-24
Attorney, Agent or Firm:
OHTANI PATENT OFFICE (JP)
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