Title:
GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, SELF-SUPPORTING SUBSTRATE, AND FUNCTIONAL ELEMENT
Document Type and Number:
WIPO Patent Application WO/2021/100242
Kind Code:
A1
Abstract:
[Problem] To provide a microstructure in the thickness direction so as to make it possible to reduce warping of a group 13 element nitride crystal layer. [Solution] A group 13 element nitride crystal layer 13 comprises group 13 element nitride crystals selected from gallium nitride, aluminum nitride, indium nitride, and mixed crystals thereof, and has a top surface and a bottom surface. High-brightness layers 5 and low-brightness layers 6 are present alternately when a cross-section obtained by cutting the group 13 element nitride crystal layer 13 in a direction T perpendicular to the top surface is observed by cathodoluminescence, and the thickness td of the low-brightness layers 6 is 3 to 10 inclusive when the thickness tb of the high-brightness layers 5 is taken as one.
Inventors:
NOGUCHI SUGURU (JP)
HIRAO TAKAYUKI (JP)
ISODA YOSHINORI (JP)
UCHIKAWA TETSUYA (JP)
HIRAO TAKAYUKI (JP)
ISODA YOSHINORI (JP)
UCHIKAWA TETSUYA (JP)
Application Number:
PCT/JP2020/027467
Publication Date:
May 27, 2021
Filing Date:
July 15, 2020
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
International Classes:
C30B29/38; C30B19/02; C30B25/18; H01L33/32
Domestic Patent References:
| WO2018097102A1 | 2018-05-31 | |||
| WO2019038892A1 | 2019-02-28 | |||
| WO2017098756A1 | 2017-06-15 |
Attorney, Agent or Firm:
HOSODA Masutoshi et al. (JP)
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