Title:
GROUP III NITRIDE SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2021/132491
Kind Code:
A1
Abstract:
A group III nitride single-crystal substrate having a first main surface and a rear surface on the reverse side thereof from the first main surface, wherein the absolute value of the curvature radius of the first main surface of the substrate is 10 m or greater, the absolute value of the curvature radius of a crystal lattice plane in the center of the first main surface of the substrate is 10 m or greater, and the 1/1000 intensity width of the X-ray rocking curve of a low-angle incident surface in the center of the first main surface of the substrate is 1200 seconds or less.
Inventors:
NAGASHIMA TORU (JP)
Application Number:
PCT/JP2020/048513
Publication Date:
July 01, 2021
Filing Date:
December 24, 2020
Export Citation:
Assignee:
TOKUYAMA CORP (JP)
International Classes:
C30B29/38; C23C16/34; C30B25/20; H01L21/205; H01L21/304
Domestic Patent References:
| WO2017164233A1 | 2017-09-28 |
Foreign References:
| JP2013209260A | 2013-10-10 | |||
| JP2018078260A | 2018-05-17 | |||
| JP2014141413A | 2014-08-07 |
Attorney, Agent or Firm:
YAMAMOTO, Noriaki et al. (JP)
Download PDF: