Title:
HEAT DISSIPATION PLATE, SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR MODULE
Document Type and Number:
WIPO Patent Application WO/2021/040030
Kind Code:
A1
Abstract:
The present invention provides a heat dissipation plate which has a cladding structure of a Cu-Mo composite material and a Cu material, while satisfying the high heat dissipation characteristics required to a heat dissipation plate for semiconductor package with frame applications where a high-output small-sized semiconductor is mounted, and which is capable of preventing a crack in a frame due to local stress concentration if applied to a semiconductor package with a frame. A heat dissipation plate which is configured of three or more Cu layers and two or more Cu-Mo composite layers by alternately stacking the Cu layers and the Cu-Mo composite layers in the plate thickness direction, while arranging Cu layers as the outermost layers on both sides. The Cu layers serving as the outermost layers on both sides have a thickness t1 of 40 μm or more; the thickness t1 and the plate thickness T satisfy 0.06 ≤ t1/T ≤ 0.27; and the thickness t2 of each Cu-Mo composite layer and the plate thickness T satisfy t2/T ≤ 0.36/(((number of all layers) – 1)/2) (wherein (number of all layers) is the sum of the number of Cu layers and the number of Cu-Mo composite layers).
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Inventors:
TERAO HOSHIAKI (JP)
HASHIMOTO KOUICHI (JP)
WADA RAITA (JP)
HASHIMOTO KOUICHI (JP)
WADA RAITA (JP)
Application Number:
PCT/JP2020/032773
Publication Date:
March 04, 2021
Filing Date:
August 28, 2020
Export Citation:
Assignee:
JFE PREC CORPORATION (JP)
JFE STEEL CORP (JP)
JFE STEEL CORP (JP)
International Classes:
B21B1/38; B21B3/00; B32B15/01; B32B15/20; C22C27/04; H01L23/373; H05K7/20
Domestic Patent References:
| WO2019098350A1 | 2019-05-23 | |||
| WO2018043179A1 | 2018-03-08 |
Foreign References:
| JP2019096860A | 2019-06-20 | |||
| JP2007142126A | 2007-06-07 |
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
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