Title:
HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS
Document Type and Number:
WIPO Patent Application WO/2020/188979
Kind Code:
A1
Abstract:
According to the present invention, a semiconductor wafer is preliminarily heated at a preliminary heating temperature, and is then irradiated with flash light from a flash lamp. The surface temperature of the semiconductor wafer raised by the flash light irradiation is measured by means of an upper-radiating thermometer. When the surface temperature of the semiconductor wafer measured by means of the upper-radiating thermometer has reached a target temperature, electric current supply to the flash lamp is terminated and the surface temperature of the semiconductor wafer is allowed to decrease. Because electric current supply to the flash lamp is terminated when the actually measured temperature of the surface of the semiconductor wafer has reached the target temperature, it is possible to raise the surface temperature of the semiconductor wafer accurately to the target temperature, regardless of the surface state or reflectivity of the semiconductor wafer.
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Inventors:
SHIGEMASU SHOGO (JP)
KATO SHINICHI (JP)
KATO SHINICHI (JP)
Application Number:
PCT/JP2020/001217
Publication Date:
September 24, 2020
Filing Date:
January 16, 2020
Export Citation:
Assignee:
SCREEN HOLDINGS CO LTD (JP)
International Classes:
H01L21/26
Foreign References:
| JP2011204742A | 2011-10-13 | |||
| JP2013046047A | 2013-03-04 | |||
| JP2018148201A | 2018-09-20 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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