Title:
HEAT TREATMENT METHOD AND HEAT TREATMENT DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/166249
Kind Code:
A1
Abstract:
According to the present invention, 40 halogen lamps are arranged in a rectangular light source region so as to form a grid pattern in two vertical tiers. The halogen lamps are arranged most densely at four corners of the rectangular light source region. A semiconductor wafer is held on a susceptor so that the <100> crystal orientation of the semiconductor wafer coincides with the longitudinal direction of the rod-like halogen lamps. At the time of preliminary heating by means of the halogen lamps, a temperature gradient occurring along the <100> crystal orientation of the semiconductor wafer is smaller than a temperature gradient occurring along the <110> crystal orientation. As a result of the temperature gradient along the <100> crystal orientation, along which warp occurs more easily, becoming smaller than the temperature gradient along the <110> crystal orientation, it is possible to prevent the semiconductor wafer from warping at the time of light irradiation and heating.
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Inventors:
FUSE KAZUHIKO (JP)
Application Number:
PCT/JP2020/000804
Publication Date:
August 20, 2020
Filing Date:
January 14, 2020
Export Citation:
Assignee:
SCREEN HOLDINGS CO LTD (JP)
International Classes:
H01L21/26
Foreign References:
| JP2005072045A | 2005-03-17 | |||
| US20130171744A1 | 2013-07-04 | |||
| JP2014157968A | 2014-08-28 | |||
| JP2018137304A | 2018-08-30 | |||
| JP2011040544A | 2011-02-24 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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