Title:
HETEROJUNCTION TRANSISTOR TYPE LIGHT SIMULATION SYNAPTIC DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/108463
Kind Code:
A1
Abstract:
Disclosed in the present invention are a heterojunction transistor type light simulation synaptic device and a manufacturing method therefor. The heterojunction transistor type light simulation synaptic device comprises a channel semiconductor layer and a light absorption layer, and the channel semiconductor layer and the light absorption layer form a heterojunction; or the heterojunction transistor type light simulation synaptic device comprises the channel semiconductor layer, a charge transport layer, and the light absorption layer, and the channel semiconductor layer, the charge transport layer, and the light absorption layer form the heterojunction. According to the present invention, a proper heterojunction structure is used, so that photo-generated carrier separation is effectively promoted, and the device can work under a low-voltage condition. The unbalanced carriers of the light absorption layer are transferred into a photoelectric transistor channel by means of a proper heterojunction interface, and high light gain is achieved by using an internal amplification effect, and thus, the internal amplification effect can cause light simulation synapse under extremely low illumination (energy consumption). The device can work under low voltage and low illumination intensity, and thus, energy is saved. In the using process, the energy consumed by a single light pulse is extremely low.
Inventors:
LI JIA (CN)
CAO YONG (CN)
CAO YONG (CN)
Application Number:
PCT/CN2021/138221
Publication Date:
June 22, 2023
Filing Date:
December 15, 2021
Export Citation:
Assignee:
SHENZHEN INST ADV TECH (CN)
SHENZHEN INST OF ADV TECH CAS (CN)
SHENZHEN INST OF ADV TECH CAS (CN)
International Classes:
H01L29/78; H01L21/336; H01L29/06
Domestic Patent References:
| WO2016024676A1 | 2016-02-18 |
Foreign References:
| CN111564499A | 2020-08-21 |
Other References:
WU FU-CHIAO, LI PEI-RONG, LIN BO-REN, WU REN-JIE, CHENG HORNG-LONG, CHOU WEI-YANG: "Ultraviolet Light-Activated Charge Modulation Heterojunction for Versatile Organic Thin Film Transistors", APPLIED MATERIALS & INTERFACES, AMERICAN CHEMICAL SOCIETY, US, vol. 13, no. 38, 29 September 2021 (2021-09-29), US , pages 45822 - 45832, XP093072652, ISSN: 1944-8244, DOI: 10.1021/acsami.1c12390
ZHONG YA‐NAN, GAO XU, XU JIAN‐LONG, SIRRINGHAUS HENNING, WANG SUI‐DONG: "Selective UV‐Gating Organic Memtransistors with Modulable Levels of Synaptic Plasticity", ADVANCED ELECTRONIC MATERIALS, vol. 6, no. 2, 1 February 2020 (2020-02-01), pages 1900955, XP093072653, ISSN: 2199-160X, DOI: 10.1002/aelm.201900955
ZHONG YA‐NAN, GAO XU, XU JIAN‐LONG, SIRRINGHAUS HENNING, WANG SUI‐DONG: "Selective UV‐Gating Organic Memtransistors with Modulable Levels of Synaptic Plasticity", ADVANCED ELECTRONIC MATERIALS, vol. 6, no. 2, 1 February 2020 (2020-02-01), pages 1900955, XP093072653, ISSN: 2199-160X, DOI: 10.1002/aelm.201900955
Attorney, Agent or Firm:
BEIJING CHENGHUI LAW FIRM (CN)
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