Title:
HIGH-MOBILITY THIN-FILM TRANSISTOR DRIVING ELEMENT AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2023/239181
Kind Code:
A1
Abstract:
The present invention relates to a high-mobility driving element and a method for manufacturing same, the high-mobility driving element comprising: a substrate; an insulating film disposed on the substrate; a channel layer disposed on at least a partial region of the insulating film and including a metal oxide; a source electrode and a drain electrode connected to the channel layer and disposed on the insulating film and either side of the channel layer to face each other; and a protective layer covering all of the channel layer, the source electrode, and the drain electrode, wherein the channel layer comprises a plurality of fluorinated regions in at least a partial region between the source electrode and the drain electrode.
Inventors:
LEE SOO YEON (KR)
LEE JIN KYU (KR)
LEE JIN KYU (KR)
Application Number:
PCT/KR2023/007874
Publication Date:
December 14, 2023
Filing Date:
June 08, 2023
Export Citation:
Assignee:
SEOUL NAT UNIV R&DB FOUNDATION (KR)
International Classes:
H01L29/786; H01L21/02; H01L29/66
Foreign References:
| KR20120076062A | 2012-07-09 | |||
| KR20080047152A | 2008-05-28 | |||
| KR20190063022A | 2019-06-07 | |||
| KR20060121488A | 2006-11-29 | |||
| JP2016072570A | 2016-05-09 |
Attorney, Agent or Firm:
SUK, Sang Yong (KR)
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