Title:
HIGH PRESSURE HIGH TEMPERATURE GROWTH OF CRYSTALLINE GROUP III METAL NITRIDES
Document Type and Number:
WIPO Patent Application WO2003083187
Kind Code:
A8
Abstract:
A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material (106) and a source material (102) comprising at least one Group III metal selected from the group consisting of aluminum, indium, and gallium, to a reaction vessel (100); sealing the reaction vessel (100); heating the reaction vessel (100) to a predetermined temperature and applying a predetermined pressure to the vessel. The pressure is sufficient to suppress decomposition of the Group III metal nitride at the temperature. Group III metal nitrides, as well as electronic devices having a Group III metal nitride substrate formed by the method are also disclosed.
Inventors:
D EVELYN MARK PHILIP
WEBB STEVEN WILLIAM
VAGARALI SURESH SHANKARAPPA
KADIOGLU YAVUZ
PARK DONG-SIL
CHEN ZHENG
WEBB STEVEN WILLIAM
VAGARALI SURESH SHANKARAPPA
KADIOGLU YAVUZ
PARK DONG-SIL
CHEN ZHENG
Application Number:
PCT/US2003/005114
Publication Date:
October 14, 2004
Filing Date:
February 21, 2003
Export Citation:
Assignee:
GEN ELECTRIC (US)
International Classes:
C30B9/00; C30B9/06; C30B29/38; (IPC1-7): C30B9/00; C30B29/40
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