HIGH-PURITY COPPER SPUTTERING TARGET - JX NIPPON MINING & METALS CORP

Title:

HIGH-PURITY COPPER SPUTTERING TARGET

Document Type and Number:

WIPO Patent Application WO/2013/105424

Kind Code:

A1

Abstract:

A high-purity copper sputtering target characterized in that the flange part of the target has a Vickers hardness in the range of 90-100 Hv, the central erosion part of the target has a Vickers hardness in the range of 55-70 Hv, and the erosion part has a crystal grain diameter of 80 µm or smaller. This high-purity copper sputtering target need not be bonded to a backing plate (BP). Since the flange part of the target has enhanced strength (hardness) to reduce the amount of warpage of the target, a thin film having excellent evenness (uniformity) can be formed therefrom. Furthermore, the erosion part and flange part of the target are each made to have a regulated degree of (111) orientation to improve the evenness of film thickness.

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Inventors:

OKABE TAKEO (JP)
OTSUKI TOMIO (JP)
WATANABE SHIGERU (JP)

Application Number:

PCT/JP2012/083396

Publication Date:

July 18, 2013

Filing Date:

December 25, 2012

Export Citation:

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Assignee:

JX NIPPON MINING & METALS CORP (JP)

International Classes:

C23C14/34; H01L21/285

Domestic Patent References:

WO2010085316A1

2010-07-29

Foreign References:

JPH10330923A	1998-12-15
JP2005533930A	2005-11-10
JP2001107227A	2001-04-17
JP2002121662A	2002-04-26
JP2005533187A	2005-11-04

Other References: