Title:
HIGH-VOLTAGE POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/041001
Kind Code:
A1
Abstract:
The present invention provides a high-voltage power semiconductor device and a manufacturing method therefor. A plurality of second resistive field plate structures extending through an epitaxial layer to a substrate in a first direction are provided in a terminal region of the epitaxial layer, and the second resistive field plate structures are arranged in a first plane concentrically and intermittently around an active region. Each second resistive field plate structure and a third resistive field plate structure on the second resistive field plate structure form a π-shaped combined resistive field plate structure. When a voltage is applied, the tightly coupled second resistive field plate structures form uniform three-dimensional electric field distribution diverged towards the periphery in an open mode, such that the guiding and constraint effect of the terminal region on charges in a space depletion region in the active region is optimized, thereby improving the voltage resistance performance of the whole power semiconductor device. Moreover, there are gaps and notches in the formed three-dimensional electric fields, such that power lines can be properly kept continuous, and the electric fields are not excessively concentrated, thereby improving the structural stability of the terminal region and the whole high-voltage power semiconductor device.
Inventors:
TAN KAIZHOU (CN)
XIAO TIAN (CN)
LI XIAOQUAN (CN)
XU XUELIANG (CN)
WANG YING (CN)
JIANG YONGQING (CN)
WANG YUXIN (CN)
LI GUANGBO (CN)
WANG PENGFEI (CN)
PEI YING (CN)
WU JIAN (CN)
LI RUZHANG (CN)
WANG ZHIKUAN (CN)
QIU SHENG (CN)
ZHANG PEIJIAN (CN)
ZHANG ZHENGYUAN (CN)
LIU YUKUI (CN)
XIAO TIAN (CN)
LI XIAOQUAN (CN)
XU XUELIANG (CN)
WANG YING (CN)
JIANG YONGQING (CN)
WANG YUXIN (CN)
LI GUANGBO (CN)
WANG PENGFEI (CN)
PEI YING (CN)
WU JIAN (CN)
LI RUZHANG (CN)
WANG ZHIKUAN (CN)
QIU SHENG (CN)
ZHANG PEIJIAN (CN)
ZHANG ZHENGYUAN (CN)
LIU YUKUI (CN)
Application Number:
PCT/CN2023/089680
Publication Date:
February 29, 2024
Filing Date:
April 21, 2023
Export Citation:
Assignee:
CHINA ELECTRONICS TECH GROUP CORPORATION NO 24 RESEARCH INSTITUTE (CN)
International Classes:
H01L29/06; H01L21/336; H01L29/78
Foreign References:
| CN115295627A | 2022-11-04 | |||
| CN114335164A | 2022-04-12 | |||
| US20020134998A1 | 2002-09-26 | |||
| CN104716192A | 2015-06-17 | |||
| CN111668287A | 2020-09-15 | |||
| CN114464667A | 2022-05-10 | |||
| CN114823873A | 2022-07-29 | |||
| CN211265483U | 2020-08-14 |
Attorney, Agent or Firm:
J.Z.M.C. PATENT AND TRADEMARK LAW OFFICE (GENERAL PARTNERSHIP) (CN)
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