Title:
IGBT HALF-BRIDGE MODULE STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2020/108365
Kind Code:
A1
Abstract:
An IGBT half-bridge module structure. A left IGBT chip (4) and a left FRD chip (5) are provided on a left DBC (2), the left IGBT chip (4) and the left FRD chip (5) are welded to the upper end of the left DBC (2) by means of a solder paste, a left G electrode signal terminal (6) is led out from the left IGBT chip (4), and a left E electrode signal terminal (7) is led out from the left FRD chip (5); and a right IGBT chip (8) and a right FRD chip (9) are provided on a right DBC (3), the right IGBT chip (8) and the right FRD chip (9) are welded to the upper end of the right DBC (3) by means of the solder paste, the right IGBT chip (8) is connected to the right FRD chip (9), and a right G electrode signal terminal (10) and a right E electrode signal terminal (11) are led out from the right IGBT chip (8). Said structure uses a bonding connection instead of a single-core copper conductor welding solution, reducing production difficulty, improving production efficiency, increasing current bearing capability of products, and enhancing the reliability of long-term use of the products.
Inventors:
ZANG TIANCHENG (CN)
ZHANG RU (CN)
JIANG WEIBIN (CN)
JIN HAO (CN)
AN YONG (CN)
ZHANG RU (CN)
JIANG WEIBIN (CN)
JIN HAO (CN)
AN YONG (CN)
Application Number:
PCT/CN2019/119747
Publication Date:
June 04, 2020
Filing Date:
November 20, 2019
Export Citation:
Assignee:
YANTAI TAIXIN ELECTRONIC TECH CO LTD (CN)
International Classes:
H01L25/07; H01L23/498
Foreign References:
| CN208819876U | 2019-05-03 | |||
| CN208157401U | 2018-11-27 | |||
| CN104332446A | 2015-02-04 | |||
| CN202585404U | 2012-12-05 |
Attorney, Agent or Firm:
BEIJING ZHONGCHUANG BOTEN INTELLECTUAL PROPERTY AGENCY (GENERAL PARTNERSHIP) (CN)
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