Title:
IMPURITY DIFFUSION COMPOSITION, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT USING SAME, AND METHOD FOR MANUFACTURING SOLAR CELL
Document Type and Number:
WIPO Patent Application WO/2021/060182
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide an impurity diffusion composition that allows uniform impurity diffusion in a semiconductor substrate, and excellent continuous printing capability in screen printing. In order to achieve this purpose, the impurity diffusion composition according to the present invention has the following structure. Specifically, this impurity diffusion composition contains (A) a polyvinyl alcohol, (B) an impurity diffusion component, and (C) a siloxane, wherein the saponification value of the polyvinyl alcohol (A) is not less than 20 mol% but less than 90 mol%, and the siloxane (C) includes a specific moiety structure.
Inventors:
KITADA TSUYOSHI (JP)
YUBA TOMOYUKI (JP)
AKIMOTO AKIRA (JP)
YUBA TOMOYUKI (JP)
AKIMOTO AKIRA (JP)
Application Number:
PCT/JP2020/035439
Publication Date:
April 01, 2021
Filing Date:
September 18, 2020
Export Citation:
Assignee:
TORAY INDUSTRIES (JP)
International Classes:
H01L31/18; H01L21/225
Domestic Patent References:
| WO2019176716A1 | 2019-09-19 | |||
| WO2020116340A1 | 2020-06-11 |
Foreign References:
| JP2016195203A | 2016-11-17 | |||
| JP2017103379A | 2017-06-08 | |||
| JP2013008953A | 2013-01-10 | |||
| JP2006310373A | 2006-11-09 |
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