Title:
IN FILM, IN SPUTTERING TARGET FOR FORMING IN FILM, AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2015/053265
Kind Code:
A1
Abstract:
Provided is an In sputtering target having a composition containing a total of 0.5 to 10.0 atom% of at least one type of element selected from the group consisting of Bi, Sb, Sn, and Zn, the remainder comprising In and unavoidable impurities.
Inventors:
UMEMOTO KEITA (JP)
ZHANG SHOUBIN (JP)
KATO SHINJI (JP)
ZHANG SHOUBIN (JP)
KATO SHINJI (JP)
Application Number:
PCT/JP2014/076811
Publication Date:
April 16, 2015
Filing Date:
October 07, 2014
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C23C14/34; C23C14/14; H01L31/0749
Foreign References:
| JP2004068054A | 2004-03-04 | |||
| JP2000121824A | 2000-04-28 | |||
| JP2012172265A | 2012-09-10 |
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
Masatake Shiga (JP)
Masatake Shiga (JP)
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