Title:
INDIUM PHOSPHIDE SUBSTRATE AND METHOD FOR MANUFACTURING INDIUM PHOSPHIDE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2021/019887
Kind Code:
A1
Abstract:
Provided are: an indium phosphide substrate having a superior accuracy of flatness of an orientation flat; and a method for manufacturing an indium phosphide substrate using the same. This indium phosphide substrate is characterized by having a main surface and an orientation flat, wherein: when in a surface excluding a 3 mm-width inward portion from both ends of an orientation flat end surface in the longitudinal direction of the orientation flat end surface, four cross-sectional curves are set at intervals of 1/5 of the substrate thickness, and the maximum heights Pz specified according to JIS B 0601:2013 are measured on the four curves, the difference between the maximum value and the minimum value of the maximum heights Pz on the four cross-sectional curve is no greater than 1.50/10,000 of the longitudinal length of the orientation flat end surface.
Inventors:
ITANI KENYA (JP)
KURITA HIDEKI (JP)
HAYASHI HIDEAKI (JP)
KURITA HIDEKI (JP)
HAYASHI HIDEAKI (JP)
Application Number:
PCT/JP2020/020789
Publication Date:
February 04, 2021
Filing Date:
May 26, 2020
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
H01L21/304; C30B29/40; H01L21/306
Foreign References:
JP2003100575A | 2003-04-04 | |||
JP2001267235A | 2001-09-28 | |||
JPH041417B2 | 1992-01-13 | |||
JP2014028723A | 2014-02-13 |
Other References:
See also references of EP 3933890A4
Attorney, Agent or Firm:
AXIS PATENT INTERNATIONAL (JP)
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