Title:
INDIUM PHOSPHIDE SUBSTRATE AND METHOD FOR PRODUCING INDIUM PHOSPHIDE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2021/019886
Kind Code:
A1
Abstract:
Provided are: an indium phosphide substrate exhibiting good accuracy in linearity of a ridgeline at which a main surface and an orientation flat are in contact with each other; and a method for producing the indium phosphide substrate. This indium phosphide substrate having a main surface and an orientation flat is characterized in that, in a ridgeline at which the main surface and the orientation flat are in contact with each other, when parts having a length of 3 mm are excluded from both ends of the ridgeline, a plurality of measurement points from a start point to an end point are set at an interval of 2 mm in the ridgeline, a straight line connecting the start point and the end point is defined a reference line, and a distance of each of the measurement points from the reference line is defined as a deviation of the measurement point, a maximum value of the deviation is not more than one thousandth of the length of the ridgeline.
Inventors:
ITANI KENYA (JP)
KURITA HIDEKI (JP)
HAYASHI HIDEAKI (JP)
KURITA HIDEKI (JP)
HAYASHI HIDEAKI (JP)
Application Number:
PCT/JP2020/020788
Publication Date:
February 04, 2021
Filing Date:
May 26, 2020
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
H01L21/304; C30B29/40; H01L21/306
Foreign References:
| JP2003100575A | 2003-04-04 | |||
| JP2001267235A | 2001-09-28 | |||
| JP2014028723A | 2014-02-13 |
Other References:
See also references of EP 3933891A4
Attorney, Agent or Firm:
AXIS PATENT INTERNATIONAL (JP)
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